SSD70N03-04D 75a, 30v, r ds(on) 6 m n-ch enhancement mode power mosfet elektronische bauelemente 14-jan-2011 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfets utilize high cell density process. low r ds(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. typical applications are pwmdc-dc converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. features ? low r ds(on) provides higher efficiency and extends battery life. ? miniature to-252 surface mount package saves board space. ? high power and current handling capability. ? low side high current dc-dc converter applications. package information package mpq leadersize to-252 2.5k 13? inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current 1 i d @t c =25 75 a pulsed drain current 2 i dm 40 a continuous source current (diode conduction) 1 i s 30 a total power dissipation 1 p d @t c =25 50 w operating junction and st orage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 50 c / w maximum thermal resistance junction-case r jc 3.0 c / w notes 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 ? ? gate ? ? source ? ? drain
SSD70N03-04D 75a, 30v, r ds(on) 6 m n-ch enhancement mode power mosfet elektronische bauelemente 14-jan-2011 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 1.0 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0v, v gs =20v zero gate voltage drain current i dss - - 1 a v ds =24v, v gs =0v - - 25 v ds =24v, v gs =0v, t j =55c on-state drain current 1 i d(on) 34 - - a v ds =5v, v gs =10v drain-source on-resistance 1 r ds(on) - - 6 m ? v gs =10v, i d =75a - - 8 v gs =4.5v, i d =65 a forward transconductance 1 g fs - 22 - s v ds =15v, i d =75 a diode forward voltage v sd - 1.1 - v i s =34a, v gs =0v dynamic 2 total gate charge q g - 25.5 - nc v ds =15v v gs =4.5v i d =75 a gate-source charge q gs - 6.6 - gate-drain charge q gd - 9.0 - turn-on delay time t d(on) - 16 - ns v dd =25v i d =34a v gen =10 v r l =25 ? rise time t r - 5 - turn-off delay time t d(off) - 23 - fall time t f - 3 - notes 1 pulse test pulse width Q 300 s, duty cycle Q 2 . 2 guaranteed by design, not s ubject to production testing.
SSD70N03-04D 75a, 30v, r ds(on) 6 m n-ch enhancement mode power mosfet elektronische bauelemente 14-jan-2011 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
SSD70N03-04D 75a, 30v, r ds(on) 6 m n-ch enhancement mode power mosfet elektronische bauelemente 14-jan-2011 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
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